Ed Lindow
11Patents
3h-index
11Co-inventors
49Inventor score
Filing activity: Jul 25, 2008 → Mar 14, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US8574968B2 | Epitaxial methods and templates grown by the methods | Emerging Cross-Sectional Technologies | 9 | Active |
| US8388755B2 | Thermalization of gaseous precursors in CVD reactors | Chemistry; Metallurgy | 9 | Active |
| US9412580B2 | Methods for forming group III-nitride materials and structures formed by such methods | Electricity | 5 | Active |
| US8377802B2 | III-V semiconductor structures and methods for forming the same | Electricity | 3 | Active |
| US9023721B2 | Methods of forming bulk III-nitride materials on metal-nitride growth template layers, and structures formed by such methods | Electricity | 2 | Active |
| US8741385B2 | Thermalization of gaseous precursors in CVD reactors | Chemistry; Metallurgy | 2 | Active |
| US9012919B2 | III-V semiconductor structures and methods for forming the same | Electricity | 1 | Active |
| US9481944B2 | Gas injectors including a funnel- or wedge-shaped channel for chemical vapor deposition (CVD) systems and CVD systems with the same | Chemistry; Metallurgy | 0 | Active |
| US9175419B2 | Apparatus for delivering precursor gases to an epitaxial growth substrate | Emerging Cross-Sectional Technologies | 0 | Active |
| US9076666B2 | Template layers for heteroepitaxial deposition of III-nitride semiconductor materials using HVPE processes | Electricity | 0 | Active |
| US8975165B2 | III-V semiconductor structures with diminished pit defects and methods for forming the same | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.