Contact elements of semiconductor devices formed on the basis of a partially applied activation layer

US8389401B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Robert Seidel · Dresden, DE
• Markus Nopper · Dresden, DE
• Axel Preusse · Radebeul, DE

Key dates

• Filing date: Oct 25, 2010
• Grant date: Mar 5, 2013
• Expiry date: Oct 25, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/3011
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

When forming contact levels of sophisticated semiconductor devices, a superior bottom to top fill behavior may be accomplished by applying an activation material selectively in the lower part of the contact openings and using a selective deposition technique. Consequently, deposition-related irregularities, such as voids, may be efficiently suppressed even for high aspect ratio contact openings.