Method and apparatus for forming silicon oxide film
US8389420B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 29, 2011 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Mar 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a silicon oxide film on silicon exposed on a surface of a workpiece includes mounting the workpiece on a mounting table in a processing chamber; generating plasma of a process gas containing oxygen by supplying the process gas into the processing chamber; applying a bias to the workpiece by supplying high-frequency power to the mounting table; and forming the silicon oxide film by applying the plasma to the biased workpiece and oxidizing the silicon. A ratio of oxygen in the process gas is set to be in the range of 0.1% to 10%. A pressure in the processing chamber is set to be in the range of 1.3 Pa to 266.6 Pa upon forming the silicon oxide film. An output of the high-frequency power is set to be in the range of 0.14 W/cm2 to 2.13 W/cm2 per unit area of the workpiece.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.