Memory cells having storage elements that share material layers with steering elements and methods of forming the same

US8389971B2 · kind B2 · utility

Assignee

• SanDisk 3D LLC · US

Inventors

• Yung-Tin Chen · Santa Clara, US
• Chuanbin Pan · Sunnyvale, US
• Andrei Mihnea · Boise, US
• Steven Maxwell · Santee, US
• Kun Hou · Taipei, TW

Key dates

• Filing date: Oct 14, 2010
• Grant date: Mar 5, 2013
• Expiry date: Apr 15, 2031

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/957

Abstract

In some embodiments, a memory cell is provided that includes a storage element formed from an MIM stack including (1) a first conductive layer; (2) an RRS layer formed above the first conductive layer; and (3) a second conductive layer formed above the RRS layer, at least one of the first and second conductive layers comprising a first semiconductor material layer. The memory cell includes a steering element coupled to the storage element, the steering element formed from the first semiconductor material layer of the MIM stack and one or more additional material layers. Numerous other aspects are provided.