Power semiconductor devices, structures, and related methods
US8390060B2 · kind B2 · utility
14Cited by
11References
22Claims
0Family size
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Key dates
| Filing date | Jul 5, 2011 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Jul 5, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/516
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Power semiconductor devices, and related methods, where majority carrier flow is divided into paralleled flows through two drift regions of opposite conductivity types.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.