Conductive oxide electrodes

US8390100B2 · kind B2 · utility

Assignee

• UNITY SEMICONDUCTOR · US

Inventor

• Jonathan Bornstein · Cupertino, US

Key dates

• Filing date: Dec 18, 2009
• Grant date: Mar 5, 2013
• Expiry date: Mar 17, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/84

Abstract

Conductive oxide electrodes are described, including a bi-layer barrier structure electrically coupled with an adhesion layer, and an electrode layer, wherein the bi-layer barrier structure includes a first barrier layer electrically coupled with the adhesion layer, and a second barrier layer electrically coupled with the first barrier layer and to the electrode layer. The conductive oxide electrodes and their associated layers can be fabricated BEOL above a substrate that includes active circuitry fabricated FEOL and electrically coupled with the conductive oxide electrodes through an interconnect structure that can also be fabricated FEOL. The conductive oxide electrodes can be used to electrically couple a plurality of non-volatile re-writeable memory cells with conductive array lines in a two-terminal cross-point memory array fabricated BEOL over the substrate and its active circuitry, the active circuitry configured to perform data operations on the memory array.