Semiconductor device with reduced contact resistance
US8390131B2 · kind B2 · utility
3Cited by
16References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2007 |
| Grant date | Mar 5, 2013 |
| Priority date | — |
| Expiry date | Aug 8, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3651
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.