Method of forming conformal film having si-N bonds on high-aspect ratio pattern
US8394466B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2010 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | May 12, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method of forming a conformal dielectric film having Si—N bonds on a substrate having a patterned surface includes: introducing a reactant gas into a reaction space; introducing a silicon precursor in pulses of less than 5-second duration into the reaction space; applying a first RF power to the reaction space during the pulse of the silicon precursor; applying a second RF power to the reaction space during the interval of the silicon precursor pulse, wherein an average intensity of the second RF power during the interval of the silicon precursor pulse is greater than that of the first RF power during the pulse of the silicon precursor; and repeating the cycle to form a conformal dielectric film having Si—N bonds with a desired thickness on the patterned surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.