Vertical diodes for non-volatile memory device
US8394670B2 · kind B2 · utility
76Cited by
85References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 31, 2011 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Jun 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
Abstract
A steering device. The steering device includes an n-type impurity region comprising a zinc oxide material and a p-type impurity region comprising a silicon germanium material. A pn junction region formed from the zinc oxide material and the silicon germanium material. The steering device is a serially coupled to a resistive switching device to provide rectification for the resistive switching device to form a non-volatile memory device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.