Method for fabricating a dual-orientation group-IV semiconductor substrate
US8394704B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2009 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Mar 31, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to method for fabricating a dual-orientation group-IV semiconductor substrate and comprises in addition to performing a masked amorphization on a DSB-like substrate only in first lateral regions of the surface layer, and a solid-phase epitaxial regrowth of the surface layer in only the first lateral regions so as to establish their (100)-orientation. Subsequently, a cover layer on the surface layer is fabricated, followed by fabricating isolation regions, which laterally separate (11θ)-oriented first lateral regions and (100)-oriented second lateral regions from each other. Then the cover layer is removed in a selective manner with respect to the isolation regions so as to uncover the surface layer in the first and second lateral regions and a refilling of the first and second lateral regions between the isolation regions is performed using epitaxy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.