Bi-layer, tri-layer mask CD control
US8394722B2 · kind B2 · utility
4Cited by
6References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2008 |
| Grant date | Mar 12, 2013 |
| Priority date | — |
| Expiry date | Jan 11, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31144
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for controlling critical dimension (CD) of etch features in an etch layer disposed below a functionalized organic mask layer disposed below an intermediate mask layer, disposed below a patterned photoresist mask, which forms a stack is provided. The intermediate mask layer is opened by selectively etching the intermediate mask layer with respect to the patterned photoresist mask. The functionalized organic mask layer is opened. The functionalized organic mask layer opening comprises flowing an open gas comprising COS, forming a plasma, and stopping the flowing of the open gas. The etch layer is etched.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.