Semiconductor device and method of forming dam material with openings around semiconductor die for mold underfill using dispenser and vacuum assist
US8399305B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 20, 2010 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Aug 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor wafer contains a plurality of semiconductor die separated by saw streets. A dam material is formed over the saw streets around each of the semiconductor die. A plurality of openings is formed in the dam material. The openings in the dam material can be formed on each side or corners of the first semiconductor die. The semiconductor wafer is singulated through the dam material to separate the semiconductor die. The semiconductor die is mounted to a substrate. A mold underfill is deposited through a first opening in the dam material. A vacuum is drawn on a second opening in the dam material to cause the underfill material to cover an area between the first semiconductor die and substrate without voids. The number of second openings can be greater than the number of first openings. The first opening can be larger than the second opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.