Control of carbon nanostructure growth in an interconnect structure
US8399772B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 29, 2007 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Feb 20, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1094
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An interconnect structure on a substrate is provided. The interconnect structure comprises electrically conductive interconnect elements on at least two interconnect levels on or above a substrate level. In the interconnect structure of the invention, at least one electrically conductive via connects a first interconnect element on one interconnect level or on the substrate level to a second interconnect element on a different interconnect level. The via extends in a via opening of a first dielectric layer and comprises an electrically conductive via material that contains electrically conductive cylindrical carbon nanostructures. At least one cover-layer segment reaches into a lateral extension of the via opening and defines a via aperture that is small enough to prevent a penetration of the carbon nanostructures through the via aperture. This structure enhances control of carbon nanostructure growth in a height direction during fabrication of the interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.