Ion implanting apparatus and ion implanting method
US8399862B2 · kind B2 · utility
19Cited by
2References
19Claims
0Family size
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Key dates
| Filing date | Dec 20, 2007 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Dec 20, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
When positively charged ions are implanted into a target substrate, charge-up damage may occur on the target substrate. In order to suppress charge-up caused by secondary electrons emitted from the target substrate when positively charged ions are implanted, a conductive member is installed at a position facing the target substrate and electrically grounded with respect to a high frequency. Further, a field intensity generated in the target substrate may be reduced by controlling an RF power applied to the target substrate in pulse mode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.