Patent · US Active

Through substrate via semiconductor components

US8399936B2 · kind B2 · utility

20Cited by

13References

25Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Albert Birner · Regensburg, DE
Uwe Hoeckele · Regensburg, DE
Thomas Kunstmann · Hemau, DE
Uwe Seidel · Munich, DE

Key dates

Filing date	May 28, 2010
Grant date	Mar 19, 2013
Priority date	—
Expiry date	Jul 21, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/01079
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A structure and method of forming through substrate vias in forming semiconductor components are described. In one embodiment, the invention describes a method of forming a through substrate via by partially filling an opening with a fill material, and forming a first insulating layer over the first fill material thereby forming a gap over the opening. The method further includes forming a second insulating layer to close the gap thereby forming an enclosed cavity within the opening.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.