Techniques for providing a direct injection semiconductor memory device having ganged carrier injection lines
US8400811B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 2010 |
| Grant date | Mar 19, 2013 |
| Priority date | — |
| Expiry date | Nov 12, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/4016
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
Techniques for providing a direct injection semiconductor memory device having ganged carrier injection lines are disclosed. In one particular exemplary embodiment, the techniques may be realized as an apparatus including a first region coupled to a bit line and a second region coupled to a source line. The apparatus may also comprise a body region spaced apart from and capacitively coupled to a word line, wherein the body region is electrically floating and disposed between the first region and the second region. The apparatus may further comprise a third region coupled to a constant voltage source via a carrier injection line configured to inject charges into the body region through the second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.