Patent · US Active

Compensation of stress effects on pressure sensor components

US8402835B2 · kind B2 · utility

4Cited by

3References

27Claims

0Family size

Assignee

SILICON MICROSTRUCTURES, INC. · US

Inventors

Richard J. August · Scottsdale, US
Michael Doelle · Munich, DE

Key dates

Filing date	Feb 16, 2011
Grant date	Mar 26, 2013
Priority date	—
Expiry date	Aug 25, 2031

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10T29/49103
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

Pressure sensors having components with reduced variations due to stresses caused by various layers and components that are included in the manufacturing process. In one example, a first stress in a first direction causes a variation in a component. A second stress in a second direction is applied, thereby reducing the variation in the component. The first and second stresses may be caused by a polysilicon layer, while the component may be a resistor in a Wheatstone bridge.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.