Fabricating current-confining structures in phase change memory switch cells
US8404514B2 · kind B2 · utility
30Cited by
8References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 2012 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Jul 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
In one or more embodiments, methods of fabricating current-confining stack structures in a phase-change memory switch (PCMS) cell are provided. One embodiment shows a method of fabricating a PCMS cell with current in an upper chalcogenide confined in the row and column directions. In one embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension memory chalcogenide are shown. In another embodiment, methods of fabricating a PCMS cell with sub-lithographic critical dimension middle electrode heaters are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.