Multi-zone temperature control for semiconductor wafer
US8404572B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2009 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Sep 3, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P90/30
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An apparatus includes a process chamber configured to perform an ion implantation process. A cooling platen or electrostatic chuck is provided within the process chamber. The cooling platen or electrostatic chuck is configured to support a semiconductor wafer. The cooling platen or electrostatic chuck has a plurality of temperature zones. Each temperature zone includes at least one fluid conduit within or adjacent to the cooling platen or electrostatic chuck. At least two coolant sources are provided, each fluidly coupled to a respective one of the fluid conduits and configured to supply a respectively different coolant to a respective one of the plurality of temperature zones during the ion implantation process. The coolant sources include respectively different chilling or refrigeration units.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.