Jun-Lin Yeh
21Patents
5h-index
37Co-inventors
69Inventor score
Filing activity: Sep 15, 1997 → Nov 2, 2021
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9425126B2 | Dummy structure for chip-on-wafer-on-substrate | Electricity | 819 | Active |
| US8404572B2 | Multi-zone temperature control for semiconductor wafer | Emerging Cross-Sectional Technologies | 36 | Active |
| US5862073A | Floating gate memory array device with improved program and read performance | Physics | 12 | Expired |
| US8193586B2 | Sealing structure for high-K metal gate | Electricity | 7 | Active |
| US8450161B2 | Method of fabricating a sealing structure for high-k metal gate | Electricity | 5 | Active |
| US10113233B2 | Multi-zone temperature control for semiconductor wafer | Emerging Cross-Sectional Technologies | 4 | Active |
| US7203107B2 | Device and method for compensating defect in semiconductor memory | Physics | 3 | Expired |
| US9754831B2 | Dummy structure for chip-on-wafer-on-substrate | Electricity | 2 | Active |
| US6147529A | Voltage sensing circuit | Electricity | 2 | Expired |
| US9023664B2 | Multi-zone temperature control for semiconductor wafer | Emerging Cross-Sectional Technologies | 2 | Active |
| US10249376B2 | Flash memory storage device and operating method thereof | Physics | 1 | Active |
| US7020003B2 | Device and method for compensating defect in semiconductor memory | Physics | 1 | Expired |
| US9214495B1 | Memory cell structure and formation method thereof | Electricity | 1 | Active |
| US9136008B1 | Flash memory apparatus and data reading method thereof | Physics | 1 | Active |
| US8914569B2 | Flash memory apparatus with serial interface and reset method thereof | Physics | 0 | Active |
| US9104401B2 | Flash memory apparatus with serial interface and reset method thereof | Physics | 0 | Active |
| US8885383B1 | Flash memory and layout method thereof | Physics | 0 | Active |
| US9281020B2 | Storage medium and accessing system utilizing the same | Physics | 0 | Active |
| US10566060B2 | Memory device and program/erase method therefor | Physics | 0 | Active |
| US11682470B2 | Memory device and operating method thereof | Physics | 0 | Active |
| US10762970B2 | Inspection method for memory integrity, nonvolatile memory and electronic device | Physics | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.