Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition

US8405128B2 · kind B2 · utility

Assignee

• The Regents of the University of California · US

Inventors

• Hitoshi Sato · Kawasaki, JP
• John F. Kaeding · Mountain View, US
• Michael Iza · Goleta, US
• Benjamin A. Haskell · Lompoc, US
• Troy J. Baker · Raleigh, US
• Steven P. DenBaars · Goleta, US
• Shuji Nakamura · Goleta, US

Key dates

• Filing date: Mar 3, 2010
• Grant date: Mar 26, 2013
• Expiry date: Apr 30, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/0262
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for enhancing growth of device-quality planar semipolar nitride semiconductor thin films via metalorganic chemical vapor deposition (MOCVD) by using an (Al, In, Ga)N nucleation layer containing at least some indium. Specifically, the method comprises loading a substrate into a reactor, heating the substrate under a flow of nitrogen and/or hydrogen and/or ammonia, depositing an InxGa1-xN nucleation layer on the heated substrate, depositing a semipolar nitride semiconductor thin film on the InxGa1-xN nucleation layer, and cooling the substrate under a nitrogen overpressure.