Semiconductor structure with gate structure, source/drain region and recess filling with epitaxial layer
US8405155B2 · kind B2 · utility
4Cited by
3References
12Claims
0Family size
Assignee
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Key dates
| Filing date | Sep 23, 2010 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Feb 11, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
Abstract
A semiconductor structure comprises a substrate, a gate structure, at least a source/drain region, a recess and an epitaxial layer. The substrate includes an up surface. A gate structure is located on the upper surface. The source/drain region is located within the substrate beside the gate structure. The recess is located within the source/drain region. The epitaxial layer fills the recess, and the cross-sectional profile of the epitaxial layer is an octagon.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.