Semiconductor device and method of making semiconductor device
US8405226B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 13, 2012 |
| Grant date | Mar 26, 2013 |
| Priority date | — |
| Expiry date | Jun 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a semiconductor device including forming a micro-chip comprising a thinned-wafer having one or more components fabricated thereon disposed between a carrier and a semiconductor chip, the micro-chip being electrically connected to the semiconductor chip under a higher consumption macro of the semiconductor chip and including a thickness which is less than a thickness of the semiconductor chip, forming an interconnect between the semiconductor chip and the carrier, forming an interconnect between the micro-chip and the semiconductor chip, and forming an interconnect between the micro-chip and the carrier. The micro-chip includes a thinned micro-chip having a thickness of less than 20 microns and the semiconductor chip includes plural semiconductor chips formed as a chip stack. The micro-chip includes a plurality of micro-chips formed on the plural semiconductor chips, such that the semiconductor device is a three-dimensional integrated circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.