Forming method of amorphous carbon film, amorphous carbon film, multilayer resist film, manufacturing method of semiconductor device, and computer-readable storage medium
US8409460B2 · kind B2 · utility
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7Claims
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Key dates
| Filing date | Feb 21, 2008 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Dec 2, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0262
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An amorphous carbon film forming method is performed by using a parallel plate type plasma CVD apparatus in which an upper electrode and a lower electrode are installed within a processing chamber, and the method includes: disposing a substrate on the lower electrode; supplying carbon monoxide and an inert gas into the processing chamber; decomposing the carbon monoxide by applying a high frequency power to at least the upper electrode and generating plasma; and depositing amorphous carbon on the substrate. It is desirable that the upper electrode is a carbon electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.