Gallium nitride-based LED fabrication with PVD-formed aluminum nitride buffer layer
US8409895B2 · kind B2 · utility
14Cited by
2References
15Claims
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Key dates
| Filing date | Feb 28, 2011 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | May 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.