Methods of forming memory cells

US8409915B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• John Smythe · Boise, US
• Gurtej S. Sandhu · Boise, US

Key dates

• Filing date: Sep 20, 2010
• Grant date: Apr 2, 2013
• Expiry date: Sep 9, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B63/84

Abstract

Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric material directly against multivalent metal oxide.