Patent · US Active

Replacement gate approach based on a reverse offset spacer applied prior to work function metal deposition

US8409942B2 · kind B2 · utility

12Cited by

6References

20Claims

0Family size

Assignee

GlobalFoundries Inc. · KY

Inventors

Thilo Scheiper · Dresden, DE
Sven Beyer · Dresden, DE
Uwe Griebenow · Markkleeberg, DE
Jan Hoentschel · Dresden, DE

Key dates

Filing date	Oct 28, 2010
Grant date	Apr 2, 2013
Priority date	—
Expiry date	Oct 28, 2030

Classification

Technology area (CPC H)Electricity
CPC primaryH10D64/691
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In a replacement gate approach, a spacer may be formed in the gate opening after the removal of the placeholder material, thereby providing a superior cross-sectional shape upon forming any electrode metals in the gate opening. Moreover, the spacer may be used for reducing the gate length, while not requiring more complex gate patterning strategies.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.