Work function adjustment with the implant of lanthanides
US8409943B2 · kind B2 · utility
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3References
14Claims
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Key dates
| Filing date | Dec 28, 2010 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Dec 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices and fabrication methods are provided, in which fully silicided gates are provided. A lanthanide series metal is implanted into the gate electrode layer prior to silicidation and diffuses into the gate dielectric during an activation anneal. This process and resultant structure provides adjustment of the gate electrode work function, thereby tuning the threshold voltage of the resulting transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.