Hollow GST structure with dielectric fill
US8410468B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 28, 2010 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Apr 8, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A memory cell structure, including a substrate having a via therein bound at first and second ends thereof by electrodes. The via is coated on side surfaces thereof with GST material defining a core that is hollow or at least partially filled with material, e.g., germanium or dielectric material. One or more of such memory cell structures may be integrated in a phase change memory device. The memory cell structure can be fabricated in a substrate containing a via closed at one end thereof with a bottom electrode, by conformally coating GST material on sidewall surface of the via and surface of the bottom electrode enclosing the via, to form an open core volume bounded by the GST material, optionally at least partially filling the open core volume with germanium or dielectric material, annealing the GST material film, and forming a top electrode at an upper portion of the via.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.