Epitaxial substrate for electronic device and method of producing the same
US8410472B2 · kind B2 · utility
4Cited by
1References
6Claims
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Key dates
| Filing date | Dec 14, 2009 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Jun 8, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8164
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An epitaxial substrate for an electronic device having a Si single crystal substrate, a buffer as an insulating layer formed on the Si single crystal substrate, and a main laminated body formed by plural group III nitride layers epitaxially grown on the buffer, wherein a lateral direction of the epitaxial substrate is defined as an electric current conducting direction. The buffer including at least an initially grown layer in contact with the Si single crystal substrate and a superlattice laminate constituted of a superlattice multilayer structure on the initially grown layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.