CMOSFET device with controlled threshold voltage characteristics and method of fabricating the same

US8410541B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Wenwu Wang · Beijing, CN
• Huilong Zhu · Poughkeepsie, US
• Shijie Chen · Shanghai, CN
• Dapeng Chen · Beijing, CN

Key dates

• Filing date: Jun 24, 2010
• Grant date: Apr 2, 2013
• Expiry date: Jun 24, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/667

Abstract

There is provided a CMOSFET device with threshold voltage controlled by means of interface dipoles and a method of fabricating the same. A cap layer, for example a very thin layer of poly-silicon, amorphous silicon, or SiO2, is interposed inside high-k gate dielectric layers of the CMOSFET device, and the threshold voltage is adjusted by means of the interface dipoles formed by the cap layer inside the high-k gate dielectric layers. According to the present invention, it is possible to effectively optimize the threshold voltage of the CMOSFET device without significantly increasing EOT thereof.