CMOSFET device with controlled threshold voltage and method of fabricating the same

US8410555B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Wenwu Wang · Beijing, CN
• Huilong Zhu · Poughkeepsie, US
• Shijie Chen · Shanghai, CN
• Dapeng Chen · Beijing, CN

Key dates

• Filing date: Jun 24, 2010
• Grant date: Apr 2, 2013
• Expiry date: May 6, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/601

Abstract

There is provided a CMOSFET device with a threshold voltage controlled by means of its gate stack configuration and a method of fabricating the same. The CMOSFET device comprises: a semiconductor substrate; am interface layer grown on the silicon substrate; a first high-k gate dielectric layer deposited on the interface layer; a very thin metal layer deposited on the first high-k gate dielectric layer; a second high-k gate dielectric layer deposited on the very thin metal layer; and a gate electrode layer deposited on the second high-k gate dielectric layer.