Integrated photodiode for semiconductor substrates
US8410568B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 25, 2009 |
| Grant date | Apr 2, 2013 |
| Priority date | — |
| Expiry date | Feb 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/802
Abstract
A substrate section that is at least partially fabricated to include contact elements and materials. The substrate section includes doped regions that have a heavily doped N-type region and a heavily doped P-type region adjacent to one another. An exterior surface of the substrate has a topography that includes a light-transparent region in which light, from a light source, is able to reach a surface of the substrate. An application of light onto the light transparent region is sufficient to cause a voltage potential to form across a junction of the heavily doped regions. The substrate section may further comprise one or more electrical contacts, positioned on the substrate section to conduct current, resulting from the voltage potential created with application of light onto the light transparent region, to a circuit on the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.