Patent · US Active

System and method for detecting parasitic thyristors in an integrated circuit

US8413101B2 · kind B2 · utility

2Cited by

20References

22Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Krzysztof Domanski · Munich, DE
Jens Schneider · Bielefeld, DE
Angelika Jungmann · Unterhaching, DE

Key dates

Filing date	Jul 15, 2011
Grant date	Apr 2, 2013
Priority date	—
Expiry date	Jul 15, 2031

Classification

Technology area (CPC G)Physics
CPC primaryG06F30/398
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

In an embodiment, a method includes retrieving a layout of an integrated circuit design from a non-transitory computer readable medium, identifying a silicon controlled rectifier (SCR) structure in the layout, identifying a current injection site in the layout, and determining if a distance between the identified current injection site and the identified SCR structure is less than a first threshold. A violation is flagged if the determined distance is less than the first threshold.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.