Slotted electrostatic shield modification for improved etch and CVD process uniformity
US8413604B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 28, 2006 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | May 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05H1/46
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A more uniform plasma process is implemented for treating a treatment object using an inductively coupled plasma source which produces an asymmetric plasma density pattern at the treatment surface using a slotted electrostatic shield having uniformly spaced-apart slots. The slotted electrostatic shield is modified in a way which compensates for the asymmetric plasma density pattern to provide a modified plasma density pattern at the treatment surface. A more uniform radial plasma process is described in which an electrostatic shield arrangement is configured to replace a given electrostatic shield in a way which provides for producing a modified radial variation characteristic across the treatment surface. The inductively coupled plasma source defines an axis of symmetry and the electrostatic shield arrangement is configured to include a shape that extends through a range of radii relative to the axis of symmetry.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.