Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor device

US8415209B2 · kind B2 · utility

Assignees

• IMEC · BE
• Katholieke Universiteit Leuven, KU LEUVEN R&D · BE

Inventors

• Rita Rooyackers · Kessel-Lo, BE
• Daniele Leonelli · Leuven, BE
• Anne Vandooren · Mazy, BE
• Anne S. Verhulst · Houtvenne, BE
• Roger Loo · Leuven, BE
• Stefan De Gendt · Wijnegem, BE

Key dates

• Filing date: Apr 8, 2011
• Grant date: Apr 9, 2013
• Expiry date: May 7, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/822
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

The present disclosure provides a method for manufacturing at least one nanowire Tunnel Field Effect Transistor (TFET) semiconductor device. The method comprises providing a stack comprising a layer of channel material with on top thereof a layer of sacrificial material, removing material from the stack so as to form at least one nanowire from the layer of channel material and the layer of sacrificial material, and replacing the sacrificial material in the at least one nanowire by heterojunction material. A method according to embodiments of the present disclosure is advantageous as it enables easy manufacturing of complementary TFETs.