Gap-filling with uniform properties

US8415256B1 · kind B1 · utility

Inventors

• Alexander H. Nickel · San Jose, US
• Lu You · Santa Clara, US
• Hirokazu Tokuno · Cupertino, US
• Minh Quoc Tran · San Jose, US
• Minh Van Ngo · Union City, US
• Hieu Pham · Milpitas, US
• Erik Wilson · Santa Clara, US
• Robert A. Huertas · Hollister, US

Key dates

• Filing date: Dec 30, 2010
• Grant date: Apr 9, 2013
• Expiry date: Dec 30, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76837
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

During semiconductor fabrication homogeneous gap-filling is achieved by depositing a thin dielectric layer into the gap, post deposition curing, and then repeating deposition and post deposition curing until gap-filling is completed. Embodiments include depositing a layer of low deposition temperature gap-fill dielectric into a high aspect ratio opening, such as a shallow trench or a gap between closely spaced apart gate electrode structures, as at a thickness of about 10 Å to about 500 Å, curing after deposition, as by UV radiation or by heating at a temperature of about 400° C. to about 1000° C., depositing another layer of low deposition temperature gap-filled dielectric, and curing after deposition. Embodiments include separately depositing and separately curing multiple layers.