Inventor · Cupertino, CA, US

Hirokazu Tokuno

18Patents
5h-index
31Co-inventors
62Inventor score

Filing activity: Jun 12, 2003 → Dec 31, 2012

Most-cited inventions

PatentTitleAreaCited byStatus
US6894342B1 Structure and method for preventing UV radiation damage in a memory cell and improving contact CD control Electricity 12 Expired
US8367493B1 Void free interlayer dielectric Electricity 10 Active
US6833581B1 Structure and method for preventing process-induced UV radiation damage in a memory cell Electricity 9 Expired
US8415256B1 Gap-filling with uniform properties Electricity 7 Active
US7534732B1 Semiconductor devices with copper interconnects and composite silicon nitride capping layers Electricity 6 Active
US7884030B1 Gap-filling with uniform properties Electricity 3 Active
US7538026B1 Multilayer low reflectivity hard mask and process therefor Electricity 3 Expired
US7238571B1 Non-volatile memory device with increased reliability Electricity 2 Expired
US8026169B2 Cu annealing for improved data retention in flash memory devices Electricity 2 Active
US7927723B1 Film stacks to prevent UV-induced device damage Physics 1 Expired
US7341956B1 Disposable hard mask for forming bit lines Electricity 1 Expired
US7220643B1 System and method for gate formation in a semiconductor device Electricity 1 Expired
US7157335B1 Using thin undoped TEOS with BPTEOS ILD or BPTEOS ILD alone to improve charge loss and contact resistance in multi bit memory devices Electricity 1 Expired
US7307027B1 Void free interlayer dielectric Electricity 1 Expired
US7888269B2 Triple layer anti-reflective hard mask Electricity 0 Active
US8048797B2 Multilayer low reflectivity hard mask and process therefor Electricity 0 Active
US8614475B2 Void free interlayer dielectric Electricity 0 Active
US8309457B2 Multilayer low reflectivity hard mask and process therefor Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.