Methods of self-aligned growth of chalcogenide memory access device

US8415661B2 · kind B2 · utility

Assignee

• Micron Technology, Inc. · US

Inventors

• Neil Greeley · Boise, US
• Bhaskar Srinivasan · Boise, US
• Gurtej S. Sandhu · Boise, US
• John Smythe · Boise, US

Key dates

• Filing date: Jun 7, 2012
• Grant date: Apr 9, 2013
• Expiry date: Jun 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10N70/8828

Abstract

Self-aligning fabrication methods for forming memory access devices comprising a doped chalcogenide material. The methods may be used for forming three-dimensionally stacked cross point memory arrays. The method includes forming an insulating material over a first conductive electrode, patterning the insulating material to form vias that expose portions of the first conductive electrode, forming a memory access device within the vias of the insulating material and forming a memory element over the memory access device, wherein data stored in the memory element is accessible via the memory access device. The memory access device is formed of a doped chalcogenide material and formed using a self-aligned fabrication method.