Semiconductor component and method of manufacture
US8415739B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 14, 2008 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Dec 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/663
Abstract
A semiconductor component that includes an edge termination structure and a method of manufacturing the semiconductor component. A semiconductor material has a semiconductor device region and an edge termination region. One or more device trenches may be formed in the semiconductor device region and one or more termination trenches is formed in the edge termination region. A source electrode is formed in a portion of a termination trench adjacent its floor and a floating electrode termination structure is formed in the portion of the termination trench adjacent its mouth. A second termination trench may be formed in the edge termination region and a non-floating electrode may be formed in the second termination trench. Alternatively, the second termination trench may be omitted and a trench-less non-floating electrode may be formed in the edge termination region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.