Semiconductor structure and method for making the same
US8415807B2 · kind B2 · utility
3Cited by
1References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 4, 2010 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Dec 29, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention relates to a semiconductor structure and a method for making the same. The method includes the following steps: (a) providing a first wafer and a second wafer; (b) disposing the first wafer on the second wafer; (c) removing part of the first wafer, so as to form a groove; (d) forming a through via in the groove; and (e) forming at least one electrical connecting element on the first wafer. Therefore, the wafers are penetrated and electrically connected by forming only one conductive via, which leads to a simplified process and a low manufacturing cost.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.