Optical device structure using GaN substrates and growth structure for laser applications
US8416825B1 · kind B1 · utility
134Cited by
40References
24Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 20, 2012 |
| Grant date | Apr 9, 2013 |
| Priority date | — |
| Expiry date | Jan 20, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/14
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An optical device having a structured active region configured for one or more selected wavelengths of light emissions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.