Substrate processing method, computer-readable storage medium and substrate processing system
US8420303B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 1, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | May 3, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/38
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A PEB unit has a first heat plate and a second heat plate. After an exposure process for a resist film for EUV on a wafer and before a development process, the PEB unit heats the wafer through the first heat plate at a first heating temperature. A heating time through the first heat plate is not less than 10 seconds and not more than 30 seconds. Thereafter, the PEB unit heats the wafer through the second heat plate at a second heating temperature lower than the first heating temperature. A temperature difference between the first heating temperature and the second heating temperature is not less than 20° C. and not more than 60° C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.