Method for fabricating a gate dielectric layer and for fabricating a gate structure
US8420477B2 · kind B2 · utility
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19Claims
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Key dates
| Filing date | Apr 27, 2011 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Nov 7, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28202
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a gate dielectric layer comprises the steps of: forming a dielectric layer on a semiconductor substrate; performing a nitrogen treating process to form a nitride layer on the dielectric layer; and performing a thermal treating process at 1150-1400° C. for a period of 400-800 milliseconds, to form a gate dielectric layer. A step of forming a gate layer on the gate dielectric layer may be performed to form a gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.