Power MOS electronic device and corresponding realizing method

US8420487B2 · kind B2 · utility

Assignee

• STMicroelectronics SA

Inventors

• Angelo Magri · Mascalucia, IT
• Ferruccio Frisina · Gravina di Catania, IT
• Giuseppe Ferla · Catania, IT

Key dates

• Filing date: Dec 14, 2010
• Grant date: Apr 16, 2013
• Expiry date: Jan 14, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

Power MOS device of the type comprising a plurality of elementary power MOS transistors having respective gate structures and comprising a gate oxide with double thickness having a thick central part and lateral portions of reduced thickness. Such device exhibiting gate structures comprising first gate conductive portions overlapped onto said lateral portions of reduced thickness to define, for the elementary MOS transistors, the gate electrodes, as well as a conductive structure or mesh. Such conductive structure comprising a plurality of second conductive portions overlapped onto the thick central part of gate oxide and interconnected to each other and to the first gate conductive portions by means of a plurality of conducive bridges.