Patent · US Active

Structure and method for replacement metal gate field effect transistors

US8420491B2 · kind B2 · utility

7Cited by

13References

12Claims

0Family size

Assignee

International Business Machines Corporation · US

Inventors

Henry K. Utomo · Ridgefield, US
Unoh Kwon · Fishkill, US
Dimitri Anastassios Levedakis · Hopewell Junction, US
Ravikumar Ramachandran · Beacon, US
Viraj Y. Sardesai · Poughkeepsie, US
Rajasekhar Venigalla · Hopewell Junction, US

Key dates

Filing date	Nov 9, 2010
Grant date	Apr 16, 2013
Priority date	—
Expiry date	Apr 28, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH10D84/0186
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A structure and method for replacement metal gate (RMG) field effect transistors is disclosed. Silicide regions are formed on a raised source-drain (RSD) structure. The silicide regions form a chemical mechanical polish (CMP) stopping layer during a CMP process used to expose the gates prior to replacement. Protective layers are then applied and etched in the formation of metal contacts.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.