Metallization system of a semiconductor device comprising rounded interconnects formed by hard mask rounding

US8420533B2 · kind B2 · utility

Assignee

• GlobalFoundries Inc. · KY

Inventors

• Robert Seidel · Dresden, DE
• Thomas Werner · Radebeul, DE

Key dates

• Filing date: Nov 4, 2010
• Grant date: Apr 16, 2013
• Expiry date: Aug 6, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76811
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In sophisticated metallization systems, vertical contacts and metal lines may be formed on the basis of a dual inlaid strategy, wherein an edge rounding or corner rounding may be applied to the trench hard mask prior to forming the via openings on the basis of a self-aligned via trench concept. Consequently, self-aligned interconnect structures may be obtained, while at the same time providing superior fill conditions during the deposition of barrier materials and conductive fill materials.