Method of manufacturing a semiconductor device
US8420552B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Oct 20, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0228
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A high-k capacitor insulating film stable at a higher temperature is formed. There is provided a method of manufacturing a semiconductor device. The method comprises: forming a first amorphous insulating film comprising a first element on a substrate; adding a second element different from the first element to the first amorphous insulating film so as to form a second amorphous insulating film on the substrate; and annealing the second amorphous insulating film at a predetermined annealing temperature so as to form a third insulating film by changing a phase of the second amorphous insulating film. The concentration of the second element added to the first amorphous insulating film is controlled according to the annealing temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.