Replacement gate MOSFET with self-aligned diffusion contact
US8421077B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 2010 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Jul 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A replacement gate field effect transistor includes at least one self-aligned contact that overlies a portion of a dielectric gate cap. A replacement gate stack is formed in a cavity formed by removal of a disposable gate stack. The replacement gate stack is subsequently recessed, and a dielectric gate cap having sidewalls that are vertically coincident with outer sidewalls of the gate spacer is formed by filling the recess over the replacement gate stack. An anisotropic etch removes the dielectric material of the planarization layer selective to the material of the dielectric gate cap, thereby forming at least one via cavity having sidewalls that coincide with a portion of the sidewalls of the gate spacer. A portion of each diffusion contact formed by filling the at least one via cavity overlies a portion of the gate spacer and protrudes into the dielectric gate cap.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.