Graphene electronic device and method of fabricating the same
US8421131B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 17, 2011 |
| Grant date | Apr 16, 2013 |
| Priority date | — |
| Expiry date | Feb 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D88/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A graphene electronic device may include a silicon substrate, connecting lines on the silicon substrate, a first electrode and a second electrode on the silicon substrate, and an interlayer dielectric on the silicon substrate. The interlayer dielectric may be configured to cover the connecting lines and the first and second electrodes and the interlayer dielectric may be further configured to expose at least a portion of the first and second electrodes. The graphene electronic device may further include an insulating layer on the interlayer dielectric and a graphene layer on the insulating layer, the graphene layer having a first end and a second end. The first end of the graphene layer may be connected to the first electrode and the second end of the graphene layer may be connected to the second electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.